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BU2508A/DIV - Si-N 1500V 8A 125W 0.4us
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2SC4834/DIV - Si-N 500V 8A 45W <0.3/1.4
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2N3819 - Fet N-channel 25V
type n°: 2N3819description: n-chvaleurs nominales: 25V (Ig=10mA)boîtier: -
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IRF510 - MOSFET de Puissance N-channel 100V-5.6A
type n°: IRF510description: n-chvaleurs nominales: 100V-5.6A-43Wboîtier: TO220
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2N1711 - Si-N 75V 1A 0.8W 70MHz
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2N2222A - Si-N 40V 0.8A 0.5W 300MHz
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2N2905A - Si-P 60V 0.6A 0.6W 45/100
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2N2907A - Si-P 60V 0.6A 0.4W 45/100
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2N3053-CDL - Si-N 60V 0.7A 5W 100MHz
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2N6718 - Si-N 100V 2A 2W 50MHz
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2SA1315 , Toshiba - Si-P 80V 2A 0.9W 0.2us
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2SA1538 , Sanyo - Si-P 120V 0.2A 8W 400MHz
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2SA935 , RHM - Si-P 80V 0.7A 0.75W 150mh
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2SA937 , RHM - Si-P 50V 0.1A 0.3W 140MHz
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2SB1243 , RHM - Si-P 60V 3A 1w
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2SB1326 , RHM - Si-P 30V 5A 0.3W 120MHz
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2SB733 , NEC - Si-P 20V 2A 1W >50MHz
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2SC1162 - Si-N 35V 1.5A 10W 180MHz
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2SC2271 , Sanyo - Si-N 300V 0.1A 0.9W 50MHz
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2SC3503 , Sanyo - Si-N 300V 0.1A 7W 150MHz
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2SC4488 , Sanyo - Si-N 120V 1A 1W 120MHz
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2SD1802 , Sanyo - Si-N 60V 3A 15W 150MHz
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2SD2012 , Toshiba - Si-N 60V 3A 25W 3MHz
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2SD2061 , RHM - Si-N 80V 3A 30W 8MHz
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2SK170 , Toshiba - N-FET 40V 20mA 0.4w
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BC177C - Si-P 50V 0.1A 0.3W 130MHz
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BD242C - Si-P 100V 3A 40W 3MHz
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BD243C - Si-N 100V 6A 65W 3MHz
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BDX54C - p-darl 100V 6A 60W b=500
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BF256A - N-FET 30V 7mA vgs<7.5
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BF679 - Si-P 40V 30mA .16W 880MHz
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BFR90A - Si-N 15V 30mA 5.5ghz 16db
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BFR91A - Si-N 12V 50mA 6ghz 14db
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BSN304 , Philips - N-FET 300V 0.25A 1W <8e
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BSS123 - N-FET 100V 0.17A 13/29ns
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BC393 - Si-P 180V 10mA 40mw
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2SK544 - go to 2sk544-san
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BU1508AX/DIV - Si-N 1500V 8A 35W 0.6us
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BUT11AF - Si-N 800V 5A 20W 0.8us
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751
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800
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