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2SC5297 , Sanyo - Si-N 1500V 8A 60W
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2SD2390 , Sanken - n-darl 160V 10A 100W 55mh
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2SD2390 , Sanken - n-darl 160V 10A 100W 55mh
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2SK526 , Toshiba - N-FET 250V 10A 40W 0.6r 3
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2SK526 , Toshiba - N-FET 250V 10A 40W 0.6r 3
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BDW83D - n-darl+d 120V 15A 150W
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BDW83D - n-darl+d 120V 15A 150W
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IRFP9140 - p-fet 100V 19A 150W oe2
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IRFP9140 - p-fet 100V 19A 150W oe2
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SUP70N06-14 - N-FET 60V 70A 142W 0.014e
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SUP70N06-14 - N-FET 60V 70A 142W 0.014e
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2SK2843 , Toshiba - N-FET 600V 10A 45W 0.54e
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2SK2843 , Toshiba - N-FET 600V 10A 45W 0.54e
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N-darl+d 1400V 8A 62w 0.8
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N-darl+d 1400V 8A 62w 0.8
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IRF9640 - MOSFET de Puissance N-channel 200V-11A
type n°: IRF9640description: p-chvaleurs nominales: 100V-11A-125Wboîtier: TO220
2SB1098 , NEC - p-darl+d 100V 5A 20W b=80
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2SB1098 , NEC - p-darl+d 100V 5A 20W b=80
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2SC3987 , Sanyo - n-darl+d 50V 3A 15w
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2SC3987 , Sanyo - n-darl+d 50V 3A 15w
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2SJ449 , NEC - p-fet 250V 6A 35W <e8
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2SJ449 , NEC - p-fet 250V 6A 35W
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2SK1419 , Sanyo - N-FET 60V 15A 25W <e08
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2SK1419 , Sanyo - N-FET 60V 15A 25W
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2SK1420 , Sanyo - N-FET 60V 25A 30W 0.045e
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2SK1420 , Sanyo - N-FET 60V 25A 30W 0.045e
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BDX37 , Philips - si-n 80V 5A 15W 350ns
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BDX37 , Philips - si-n 80V 5A 15W 350ns
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BUT11AF , Philips - Si-N 1500V 5A 20W 0.8us
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BUT11AF , Philips - Si-N 1500V 5A 20W 0.8us
SI-N 1500V 5A 20W 0.8us . ISO220 Philips.
BUX81 - Si-N 1000V 10A 100W
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BUX81 - Si-N 1000V 10A 100W
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IRFP240 - N-FET 200V 20A 150W 0e18
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IRFP240 - N-FET 200V 20A 150W 0e18
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S2055N , Toshiba - Si-N+d 1500V 8A 50W 0.3us
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S2055N , Toshiba - Si-N+d 1500V 8A 50W 0.3us
SI-N+D 1500V 8A 50W 0.3us . ISOJ04 Toshiba.
2SK2651-FEC - n.y.a./N-FET 900V 6A 50W
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2SK2651-FEC - n.y.a./N-FET 900V 6A 50W
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STP7NK80Z , ST - N-FET 800V 5.2A 125W 1.8e
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STP7NK80Z , ST - N-FET 800V 5.2A 125W 1.8e
FET. N-FET 800V 5.2A 125W 1.8E 12NS. Case: TO220. Brand: ST-Microelectronics.
2SA1186/DIV - Si-P 150V 10A 100W 60MHz
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2SA1186/DIV - Si-P 150V 10A 100W 60MHz
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BD712 - Si-P 100V 12A 75W power
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BD712 - Si-P 100V 12A 75W power
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2SA769 , Sanken - Si-P 80V 4A 30W 10MHz
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2SA769 , Sanken - Si-P 80V 4A 30W 10MHz
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2SC2331 , NEC - Si-N 150V 2A 15W power
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2SC2331 , NEC - Si-N 150V 2A 15W power
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2SD2136 , MAT - Si-N 60V 3A 1.5W 30MHz
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BU508AF , Sanyo - Si-N 1500V 8A 34W 0.7us
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BU508AF , Sanyo - Si-N 1500V 8A 34W 0.7us
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BUT18A , Philips - Si-N 1000/450V 6A 110W 0.
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BUT18A , Philips - Si-N 1000/450V 6A 110W 0.
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BUV27 - Si-N 240V 12A 65W 40ns
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BUV27 - Si-N 240V 12A 65W 40ns
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IRF840F - N-FET 500V 4.5A 40W 0.85r
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IRF840F - N-FET 500V 4.5A 40W 0.85r
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TIP152 - n-darl+d 400/400V 7A 80W
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TIP152 - n-darl+d 400/400V 7A 80W
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2SD2539 , Toshiba - Si-N 1500V 7A 50W 0.6us
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2SD2539 , Toshiba - Si-N 1500V 7A 50W 0.6us
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BD536FI
TRANSISTOR BD536FI.

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2N3055E
type n°: 2N3055Edescription: epitaxialvaleurs nominales: 70V-15Aremarques: boîtier TO3
2SB1340 , RHM - p-darl+d 120V 6A 30W b=10
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2SB1340 , RHM - p-darl+d 120V 6A 30W b=10
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2SC2053-MIT - Si-N 40V 0.3A 0.6W 500MHz
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2SC2053-MIT - Si-N 40V 0.3A 0.6W 500MHz
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2SC2407 , NEC - Si-N 35V 0.15A 0.16W 500m
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2SC2407 , NEC - Si-N 35V 0.15A 0.16W 500m
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2SC3457 , Sanyo - Si-N 1100V 3A 50W
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2SC3457 , Sanyo - Si-N 1100V 3A 50W
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2SC4231-SHI - Si-N 1200/800V 2A 30W
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2SC4231-SHI - Si-N 1200/800V 2A 30W
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2SC4468 , Sanken - Si-N 200V 10A 80W 20MHz
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2SC4468 , Sanken - Si-N 200V 10A 80W 20MHz
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2SD1590 , NEC - n-darl+d 150V 8A 25w
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2SD1590 , NEC - n-darl+d 150V 8A 25w
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2SD1765 , RHM - n-darl+d 100V 2A 20W b>1K
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2SD1765 , RHM - n-darl+d 100V 2A 20W b>1K
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BD335 - n-darl 100V 6A 60W
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BD335 - n-darl 100V 6A 60W
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BU2508DF , Philips - Si-N+d 1500V 8A 45W 0.4us
SI-N+D 1500V 8A 45W 0.4us . ISO218Philips.
P4NC60FP - N-FET 600V 4.2A 35W 2r2
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P4NC60FP - N-FET 600V 4.2A 35W 2r2
N-FET 600V 4.2A 35W 2R2 . ISO220Major Brand.
401 à 450 sur un total de 1030
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