Photo |
Prix |
Désignation |
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Stock: 0
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2SJ109 , Toshiba - p-fet dual 30V id>2.6mA . |
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Stock: 0
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2SC2312-MIT - Si-N 60V 6A 18.5w/27MHz . |
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Stock: 0
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BUF420A , ST - Si-N 1000V 30A 200W 1us . |
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Stock: 0
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IRF440 - N-FET 500V 8A 125W <0e85 . |
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BUZ906 - p-fet 200V 8A 125w . |
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Stock: 0
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2SC1879 , Hitachi - n-darl+d 120V 2A 0.8W b>1 . |
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Stock: 0
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2N5038 - Si-N 150V 20A 140W 0.5us . |
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Stock: 0
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MJ11033 , Motorola - p-darl 120V 50A 300W . |
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Stock: 0
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2SD2250 , MAT - n-darl 160V 7A 90W b>5K . |
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2SJ201 , Toshiba - p-fet 200V 12A 150W . |
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2SC5591 , MAT - Si-N 1700V 20A 70W 0.2us . |
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2SK1170 , Hitachi - also = 2sk899 . |
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Stock: 0
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BUW49 - Si-N 160V 30A 150W . |
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IRF130 - MOSFET de Puissance N-channel 100V-14A type n°: IRF130description: n-chvaleurs nominales: 60V-14A-75Wboîtier: TO3 |
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Stock: 0
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2SC4891 , Sanyo - Si-N 1500V 15A 75w . |
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Stock: 0
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2SK1358 , Toshiba - N-FET 900V 9A 150W 1.4e . |
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Stock: 0
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2SC3998 , Sanyo - Si-N 1500V 25A 250W power . Transistor has metal back side and a plastic housing. Please use for cooler block MICA JAP01. |
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Stock: 0
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2SC5003 , Sanken - Si-N+d 1500V 7A 80W . |
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Stock: 0
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Jeu de Transistors . . Caractéristiques . nombre: ± 100 piècescontenu: BC547B: ± 28BC557B: ± 28BC337: ± 12BC327: ± 12BC517: ± 6BC516: ± 6BD139: ± 4BD140: ± 4 |
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Stock: 0
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MJ11032 , Motorola - n-darl 120V 50A 300W . |
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Stock: 0
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2SA708A , NEC - Si-P 100V 0.7A 0.8W 50mh . |
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Stock: 0
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2SK2078 , Toshiba - N-FET 800V 9A 150W <1e2 . |
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Stock: 0
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BTS114 - Smart Sipmos Tempfet 50V-14A type n°: BTS114description: smart sipmos tempfetvaleurs nominales: 50V-14Aboîtier: - |
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Stock: 0
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2SC5294 , MAT - Si-N transistor . |
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Stock: 0
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2SK1941-FEC - N-FET 600V 16A 100W . |
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Stock: 0
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BU1508AX Philips transistor BU1508AX. |
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Stock: 0
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2SD1707 , MAT - Si-N 130/80V 20A 100W . |
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Stock: 0
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2SK1350 , Toshiba - N-FET 200V 15A 45W 0.18r . |
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Stock: 0
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2SK1537-SHI - N-FET 900V 5A 100W 290ns . |
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Stock: 0
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BSW68A - Si-N 150V 2A 5W 130MHz . |
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Stock: 0
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BUZ345 - MOSFET de Puissance N-channel 100V-41A type n°: BUZ345description: sie n-chvaleurs nominales: 100V-41A-150Wboîtier: TO218AA |
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Stock: 0
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2SC5570 , Toshiba - Si-N 1700V 28A 220W 0.1us . |
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Stock: 0
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2SC3688 , Sanyo - Si-N 1500V 10A 150W 0.2us . |
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Stock: 0
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2SC3842-FUJ - Si-N 600V 10A 70W 32MHz . |
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Stock: 0
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2SC5446 - Si-N 1700V 18A 200W 0.3us Diode. SI-N 1700V 18A 200W. |
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Stock: 0
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2N3773 - Transistor Au Silicium 140V-16A -150w type n°: 2N3773description: si-npn povaleurs nominales: 140V-16A-150Wremarques: - |
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Stock: 0
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BU2727AF , Philips - Si-N 1700V 12A 45w . |
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Stock: 0
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BUK437 - MOSFET de Puissance N-channel 400V-12A type n°: BUK437description: n-chvaleurs nominales: 400V-12A-180W (0.5ohm Vgs=30V)boîtier: TO3P |
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Stock: 0
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2SB1156 , MAT - Si-P 130V 20A 100W . |
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Stock: 0
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MJL21194-ONS - Si-N 250V 16A 200W 4MHz . |
51 à 100 sur un total de 1030 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 |