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diode bzv55-c2V7
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 2V7BZV55-C2V7130.81138 |
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diode bzv55-c13
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 13VBZV55-C13130.81281 |
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diode bzv55-c9V1
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 9V1BZV55-C9V1130.82583 |
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1N60 , Ge-D 45V 35ma/0.2Ap
. GE-D 45V 35mA/0.2Ap =AA11 |
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1N5399 - Si-D 1000V 1.5A/10Ap
. SI-D 1000V 1.5A/10Ap |
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1N5408 - Si-D 1000V 3A/200Ap
. SI-D 1000V 3A/200Ap |
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BA159 - Si-D 1000V 1A/35Ap 300ns
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BAS16 - Si-D 75V 0.25A 6ns a6
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BAV21 - Si-D 200V 0.2A/0.5Ap 50ns
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BAV99 - 2xSi-D 70V 0.2A 6ns a7
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BY133 - Si-D 1300V 1A/50Ap
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BY299 - Si-D 800V 2A/70Ap 500ns
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FR157 - Si-D 1000V 1.5A/60Ap 500n
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LL4148 - Si-D 75V 0.15A 0.5w 4ns
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Diode Zener 0.4 W 11 V
. Zenerdiode. 0.4 Watt. 11 Volt |
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Diode Zener 0.4 W 16 V
. Zenerdiode. 0.4 Watt. 16 Volt |
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Diode Zener 0.4 W 20 V
. Zenerdiode. 0.4 Watt. 20 Volt |
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Diode Zener 0.4 W 30 V
. Zenerdiode. 0.4 Watt. 30 Volt |
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Diode zener 0.4 Ws 33 Vs
Diode zener. 0.4 Watts. 33 Volts. |
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Diode Zener 0.4 W 39 V
. Zenerdiode. 0.4 Watt. 39 Volt |
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Diode Zener 0.4 W 3 V
. Zenerdiode. 0.4 Watt. 3 Volt |
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Diode Zener 0.4 W 4.7 V
. Zenerdiode. 0.4 Watt. 4.7 Volt |
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Diode Zener 0.4 W 51 V
. Zenerdiode. 0.4 Watt. 51 Volt |
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Diode Zener 0.4 W 56 V
. Zenerdiode. 0.4 Watt. 56 Volt |
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Diode zener 0.4 Ws 68 Vs
Diode zener. 0.4 Watts. 68 Volts. |
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Diode Zener 0.4 W 6.2 V
. Zenerdiode. 0.4 Watt. 6.2 Volt |
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Diode Zener 0.4 W 75 V
. Zenerdiode. 0.4 Watt. 75 Volt |
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Diode Zener 0.4 W 9.1 V
. Zenerdiode. 0.4 Watt. 9.1 Volt |
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BAW62 - Si-D 75V 0.2A/0.45Ap 4ns
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By228 Fast Rectif. - 1500V/3A
tension inverse de crête: 1500Vcourant redressé max.: 5Acourant direct de crête répétitif: -courant inverse max. (25°C): 5µAtension directe max.: 1.5Vremarques: rapide - sur bobineboîtier: fig. 4 |
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Diode Zener 2V7-500mW RADIALE
PREFIX référence: ZAdissipation: 500mWtolérance: 5%boîtier: fig. 1 |
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1N4007 - Si-D 1000V 1A/50Ap
. SI-D 1000V 1A/50Ap |
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1N4007 1A/1000V Taped On Reel
tension inverse de crête: 1000Vcourant redressé max.: 1Acourant direct de crête répétitif: 10Acourant inverse max. (25°C): 5µAtension directe max.: 1.1Vremarques: sur bobineboîtier: fig. 1 |
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1N4148 - Si-D 75V 0.15A/0.5Ap 4ns
. SI-D 75V 0.15A/0.5Ap 4ns |
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Diode "Petits Signaux" 150mA - 100V
tension inverse de crête: 100Vcourant redressé max.: 150mAcourant direct de crête répétitif: 450mAcourant inverse max. (25°C): -tension directe max.: 1Vremarques: sur bobineboîtier: fig. 13 |
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transient surpressor 130V
French article, on request. |
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1N5062 - Si-D 800V 2A/50Ap 6us
. SI-D 800V 2A/50Ap 6us |
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