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Catalogue » Composants » Transistors
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BC637-16
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BD675 - Transistor Au Silicium Npn 45V Power Darlington
type n°: BD675description: si-npnvaleurs nominales: 45Vremarques: power darlington

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BD676 - Transistor Au Silicium Pnp 45V Power Darlington
type n°: BD676description: si-pnpvaleurs nominales: 45Vremarques: power darlington

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TIP41C - Transistor Au Silicium Pnp 100V-10A-65w
type n°: TIP41Cdescription: si-npn povaleurs nominales: 100V-10A-65Wremarques: -
2SB1109 , Hitachi - Si-P 160V 0.1A 1.25w
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2SB1109 , Hitachi - Si-P 160V 0.1A 1.25w
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2SC3502 - Si-N 200V 0.1A 1.2w
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2SC3502 - Si-N 200V 0.1A 1.2w
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2SD1862 , RHM - Si-N 40V 2A 1W 100MHz
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2SD1862 , RHM - Si-N 40V 2A 1W 100MHz
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BCY59 - Si-N 45V 0.2A 1W 250MHz
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BCY59 - Si-N 45V 0.2A 1W 250MHz
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BD132 - Si-P 45V 3A 15W >60MHz
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BD132 - Si-P 45V 3A 15W >60MHz
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BD410 - Si-N 500V 1A 20W
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BD410 - Si-N 500V 1A 20W
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BSN254A , Philips - N-FET 250V 0.3A 1W <7e
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BSN254A , Philips - N-FET 250V 0.3A 1W <7e
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BUT12AF - Si-N 1000V 8A 23W 0.8us
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BUT12AF - Si-N 1000V 8A 23W 0.8us
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2SC1573 - Si-N 200V 0.1A 1W 80MHz
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2SC1573 - Si-N 200V 0.1A 1W 80MHz
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2SA1706 , Sanyo - Si-P 60V 2A 1w
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2SA1706 , Sanyo - Si-P 60V 2A 1w
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2SA940 - Si-P 150V 1.5A 25W 4MHz
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2SA940 - Si-P 150V 1.5A 25W 4MHz
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2SA965 , Toshiba - Si-P 120V 0.8A 0.9W 120mh
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2SA965 , Toshiba - Si-P 120V 0.8A 0.9W 120mh
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2SB631 , Sanyo - Si-P 100V 1A 8w
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2SB631 , Sanyo - Si-P 100V 1A 8w
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2SC2310 - Si-N 55V 0.1A 0.2W 230MHz
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2SC2310 - Si-N 55V 0.1A 0.2W 230MHz
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2SC288A , NEC - Si-N 35V 20mA 0.15w
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2SC288A , NEC - Si-N 35V 20mA 0.15w
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2SC2910 , Sanyo - Si-N 160V 70mA 0.9W 150mh
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2SC2910 , Sanyo - Si-N 160V 70mA 0.9W 150mh
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2SC3225 , Toshiba - Si-N 40V 2A 0.9W 1us
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2SC3225 , Toshiba - Si-N 40V 2A 0.9W 1us
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2SC3467 , Sanyo - Si-N 200V 0.1A 1W 150MHz
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2SC3467 , Sanyo - Si-N 200V 0.1A 1W 150MHz
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2SC3468 , Sanyo - Si-N 300V 0.1A 1W 150MHz
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2SC3468 , Sanyo - Si-N 300V 0.1A 1W 150MHz
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2SC4204 , Sanyo - Si-N 30V 0.7A 0.6w
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2SC4204 , Sanyo - Si-N 30V 0.7A 0.6w
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2SD438 , Sanyo - Si-N 100V 0.7A 0.9W 100mh
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2SD438 , Sanyo - Si-N 100V 0.7A 0.9W 100mh
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BD241C - Si-N 100V 3A 40W 3MHz
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BD241C - Si-N 100V 3A 40W 3MHz
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BD829 - Si-N 100V 1A 8w
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BD829 - Si-N 100V 1A 8w
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BF472 , Philips - Si-P 300V 30mA 2W 60MHz
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BF472 , Philips - Si-P 300V 30mA 2W 60MHz
DIODE. SI-P 300V 30MA 2W 60MHZ. Case: TO126. Brand: Philips.
BF872 - si-n
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BF872 - si-n
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BF996S - N-FET-dg 20V 30mA 800mhz
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BF996S - N-FET-dg 20V 30mA 800mhz
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BFR92A - Si-N 15V 30mA 5.5ghz 16db
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BFR92A - Si-N 15V 30mA 5.5ghz 16db
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2N4871
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2N4871
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BYT52J
Philips transistor BYT52J.

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2N2222A - Transistor Au Silicium Npn 40V-0.15A-300MHz
type n°: 2N2222Adescription: si-npn afvaleurs nominales: 40V-0.15Aremarques: 300MHz

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BD681 - Transistor Au Silicium Npn 100V Power Darlington
type n°: BD681description: si-npnvaleurs nominales: 100Vremarques: power darlington
2N2905A/DIV - Si-P 60V 0.6A 0.6W 45/100
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2N2905A/DIV - Si-P 60V 0.6A 0.6W 45/100
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2SA1018 , MAT - Si-P 400V 0.5A 0.75w
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2SA1018 , MAT - Si-P 400V 0.5A 0.75w
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2SA949 , Toshiba - Si-P 150V 50mA 0.8W 120mh
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2SA949 , Toshiba - Si-P 150V 50mA 0.8W 120mh
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2SB561 , Hitachi - i.c
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2SB561 , Hitachi - i.c
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2SB892 , Sanyo - Si-P 60V 2A 1w
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2SB892 , Sanyo - Si-P 60V 2A 1w
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2SC3953 , Sanyo - Si-N 120V 0.2A 8W 400MHz
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2SC3953 , Sanyo - Si-N 120V 0.2A 8W 400MHz
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2SD1207 , Sanyo - Si-N 60V 2A 1w
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2SD1207 , Sanyo - Si-N 60V 2A 1w
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2SD669A - Si-N 160V 1.5A 1W 140MHz
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2SD669A - Si-N 160V 1.5A 1W 140MHz
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2SK163 , NEC - N-FET 50V 0.03A 0.4w
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2SK163 , NEC - N-FET 50V 0.03A 0.4w
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2SK30ATM , Toshiba - N-FET 50V 6.5mA
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2SK30ATM , Toshiba - N-FET 50V 6.5mA
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BD683 - n-darl 120V 4A 40W
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BD683 - n-darl 120V 4A 40W
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BF970 - Si-P 35V 30mA 0.3W 1ghz
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BF970 - Si-P 35V 30mA 0.3W 1ghz
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MPF102 - n-fet 25V 2mA up<8V
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MPF102 - n-fet 25V 2mA up<8V
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TIP122 - n-darl 100V 5A 65w
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TIP122 - n-darl 100V 5A 65w
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801 à 850 sur un total de 1030
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