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2SK1036 , MAT - N-FET 250V 10A 50W 80ns
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2SK1036 , MAT - N-FET 250V 10A 50W 80ns
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2SK1643 , Toshiba - N-FET 900V 5A 125W 2.8e
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2SK1643 , Toshiba - N-FET 900V 5A 125W 2.8e
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MJ15024 , Motorola - si-n 250V 16A 250W
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MJ15024 , Motorola - si-n 250V 16A 250W
SI-N 400V 16A 250W. TO3Motorola.
MJ15025 , Motorola - Si-P 400V 16A 250W 4MHz
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MJ15025 , Motorola - Si-P 400V 16A 250W 4MHz
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FS10SM-18A-MIT - n.y.a./N-FET 900V 10A 200
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FS10SM-18A-MIT - n.y.a./N-FET 900V 10A 200
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2SK1529 , Toshiba - N-FET 180V 10A 120W
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2SK1529 , Toshiba - N-FET 180V 10A 120W
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2SK389 , Toshiba - 2xN-FET 50V
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MJ802 - Si-N 90V 30A 200W
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MJ802 - Si-N 90V 30A 200W
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2SC3211 , MAT - Si-N 800V 5A 70W >3MHz
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MJ11015 - p-darl 120V 30A 200W
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MJ11015 - p-darl 120V 30A 200W
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MJ15022 , Motorola - Si-N 350/200V 16A 250W
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MJ15022 , Motorola - Si-N 350/200V 16A 250W
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2N3772 - Si-N 100V 20A 150W power
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2N3772 - Si-N 100V 20A 150W power
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2SD2438 , Sanken - n-darl+d 160V 8A 70W b>5K
N-DARL+D 160V 8A 70W B>5KISO218Sanken.
2SD732 - Si-N 150V 8A 80W 15MHz
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2SD732 - Si-N 150V 8A 80W 15MHz
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BU2532AW , Philips - Si-N 1500V 16W 125w
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2SA1185 , MAT - Si-P 50V 7A 60W 100MHz
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2SA1185 , MAT - Si-P 50V 7A 60W 100MHz
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P5NB80 - N-FET 800V 5.5A 125W <2e
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P5NB80 - N-FET 800V 5.5A 125W <2e
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2SK1117 , Toshiba - N-FET 600V 6A 100W 1.25r
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2SK1117 , Toshiba - N-FET 600V 6A 100W 1.25r
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2SK2848 , Sanken - N-FET
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2SK2848 , Sanken - N-FET
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2SC5423 , MAT - Si-N 1700V 15A 100W 0.2us
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2SC5423 , MAT - Si-N 1700V 15A 100W 0.2us
SI-N 1700V 15A 100W 0.2US.
2N5116 - p-fet 30V 5mA 150e up<4V
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2N5116 - p-fet 30V 5mA 150e up<4V
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2SB1361 , MAT - Si-P 150V 9A 100W 15MHz
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2SD1398 , Sanyo - Si-N+d 1500V 5A 50W
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2SD1398 , Sanyo - Si-N+d 1500V 5A 50W
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IRFPC60 , IR - N-FET 600V 16A 280W 0.4e
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IRFPC60 , IR - N-FET 600V 16A 280W 0.4e
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STH13NB60FI , ST - N-FET 600V 12A 80W
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STH13NB60FI , ST - N-FET 600V 12A 80W
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2SD2488 , Sanken - n-darl 200V 12A 130W 70mh
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2SD2488 , Sanken - n-darl 200V 12A 130W 70mh
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2SA1673 , Sanken - Si-P 180V 15A 85W 20MHz
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2SC4762 , Toshiba - transistor
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2SC4762 , Toshiba - transistor
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2SK1296 , Hitachi - N-FET 60V 30A 0.024e
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2SK1296 , Hitachi - N-FET 60V 30A 0.024e
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2SC3381 , Toshiba - 2*Si-N 80V 0.1A 0.4W 170m
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MJ11016 - n-darl 120V 30A 200W
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MJ11016 - n-darl 120V 30A 200W
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MJ15004 , Motorola - Si-P 140V 20A 250W 3MHz
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MJ15004 , Motorola - Si-P 140V 20A 250W 3MHz
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2SB1620 , Sanken - p-darl 200V 12A 130W 60mh
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2SB1620 , Sanken - p-darl 200V 12A 130W 60mh
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MJ15003 - Si-N 140V 20A 250W 3MHz
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MJ15003 - Si-N 140V 20A 250W 3MHz
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2SC2898 - Si-N 500V 8A 50W
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2SC2898 - Si-N 500V 8A 50W
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2SK1363 , Toshiba - N-FET 900V 8A 90W 1.4e
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BUH517 , ST - Si-N 1700V 8A 60W 3.9us
SI-N 1700V 8A 60W 3.9us . ISO218ST-Microelectronics.
BUV28 - Si-N 400V 10A 65W 40ns
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BUV28 - Si-N 400V 10A 65W 40ns
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2SC2922 , Sanken - Si-N 180V 17A 200W 50MHz
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2SC2922 , Sanken - Si-N 180V 17A 200W 50MHz
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2SC3858 , Sanken - Si-N 200V 17A 200W 20MHz
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2SC3858 , Sanken - Si-N 200V 17A 200W 20MHz
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2SC4769 , Sanyo - Si-N+d 1500V 7A 60W
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2SK2698 , Toshiba - N-FET 500V 15A 150W 0.4w
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2SK2698 , Toshiba - N-FET 500V 15A 150W 0.4w
N-FET 500V 15A 150W 0.4W 65NS.

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IRFP250 - MOSFET de Puissance N-channel 200V-30A
type n°: IRFP250description: n-chvaleurs nominales: 200V-30A-180Wboîtier: TO3P
151 à 200 sur un total de 1030
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